Evidence of robust 2D transport and Efros-Shklovskii variable range hopping in disordered topological insulator (Bi2Se3) nanowires
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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| Title |
Evidence of robust 2D transport and Efros-Shklovskii variable range hopping in disordered topological insulator (Bi2Se3) nanowires
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| Creator |
Bhattacharyya, Biplab
Sharma, Alka Sinha, Bhavesh Shah, Kunjal Jejurikar, Suhas Senguttuvan, T. D. Husale, Sudhir |
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| Subject |
Agriculture, Multidisciplinary
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| Description |
We report the experimental observation of variable range hopping conduction in focused-ion-beam (FIB) fabricated ultra-narrow nanowires of topological insulator (Bi2Se3). The value of the exponent (d + 1)(-1) in the hopping equation was extracted as similar to 1/2 for different widths of nanowires, which is the proof of the presence of Efros-Shklovskii hopping transport mechanism in a strongly disordered system. High localization lengths (0.5 nm, 20 nm) were calculated for the devices. A careful analysis of the temperature dependent fluctuations present in the magnetoresistance curves, using the standard Universal Conductance Fluctuation theory, indicates the presence of 2D topological surface states. Also, the surface state contribution to the conductance was found very close to one conductance quantum. We believe that our experimental findings shed light on the understanding of quantum transport in disordered topological insulator based nanostructures.
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| Publisher |
Nature Publishing Group
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| Date |
2017-08-10
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/2709/1/Evidence%20of%20robust%202D%20transport%20and%20Efros-Shklovskii%20variable%20range%20hopping%20in%20disordered%20topological%20insulator%20%28Bi2Se3%29%20nanowires.pdf
Bhattacharyya, Biplab and Sharma, Alka and Sinha, Bhavesh and Shah, Kunjal and Jejurikar, Suhas and Senguttuvan, T. D. and Husale, Sudhir (2017) Evidence of robust 2D transport and Efros-Shklovskii variable range hopping in disordered topological insulator (Bi2Se3) nanowires. Scientific Reports, 7 (7825). pp. 1-10. ISSN 2045-2322 |
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| Relation |
http://npl.csircentral.net/2709/
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