Ferroelectric memory resistive behavior in BaTiO3/Nb doped SrTiO3 heterojunctions
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Ferroelectric memory resistive behavior in BaTiO3/Nb doped SrTiO3 heterojunctions
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| Creator |
Singh, Pooja
Rout, P. K. Singh, Manju Rakshit, R. K. Dogra, Anjana |
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| Subject |
Materials Science
Applied Physics/Condensed Matter Physics |
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| Description |
We present the memristive (memory resistive) behavior in two different pulsed laser deposited BaTiO3/Nb doped SrTiO3 junctions. The first junction is controlled by space charge limited current (SCLC) conduction while the post-annealed junction is dominated by Schottky emission. The latter junction displays better ferroelectric and memristive properties (with an order of magnitude higher OFF/ON resistance ratio) as compared to the former junction with SCLC conduction. We attribute the improved behavior of the latter junction to the reduction of oxygen vacancies due to post-annealing of the film.
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| Publisher |
Elsevier
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| Date |
2017-12-17
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/2721/1/Ferroelectric%20memory%20resistive.pdf
Singh, Pooja and Rout, P. K. and Singh, Manju and Rakshit, R. K. and Dogra, Anjana (2017) Ferroelectric memory resistive behavior in BaTiO3/Nb doped SrTiO3 heterojunctions. Thin Solid Films, 643. 60-64. ISSN 0040-6090 |
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| Relation |
http://npl.csircentral.net/2721/
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