Modeling of Organic Permeable Base Transistor Based on Inverse of Transistor Efficiency (I-C/g(m))
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Modeling of Organic Permeable Base Transistor Based on Inverse of Transistor Efficiency (I-C/g(m))
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| Creator |
Agrawal, Kalpana
Srivastava, Ritu Rajput, S. S. |
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| Subject |
Electronics and Electrical Engineering
Applied Physics/Condensed Matter |
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| Description |
For the first time, we are proposing characteristic equation, which describes the behavior of an organic permeable base transistor (OPBT). For this, an OPBT has been fabricated and studied through the experimentally obtained I-C/g(m) versus V-BE (base-emitter voltage) characteristics. The characteristic equation, i.e., collector current, I-C = k (V-BE - Vth)(n) has been obtained through curve fitting and mathematical formulations. Six OPBTs (modified by inserting a layer of barrier material of either N,N' [(-di-[(alpha-naphthyl)-N, N,N' -diphenyl]-1,1' -biphenyl)-4,4' -diamine (alpha-NPD) or N,N' -Bis(naphthalen-1-yl)-N,N' -bis(phenyl)-2,7-diamino-9, 9-(Spiro-NPB) betweenemitter and base layers) confirmthat their transfer characteristics follow this equation with n varying between 1.1 and 2.2. The n has been found to be dependent on barrier material. The gain of the device is A(O) = nV(E)/V-BE, V-E being the early voltage.
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| Publisher |
Institute of Electrical and Electronics Engineers
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| Date |
2017-08
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/2789/1/Modeling%20of%20Organic%20Permeable%20Base%20Transistor%20Based%20on%20Inverse%20of%20Transistor%20Efficiency.pdf
Agrawal, Kalpana and Srivastava, Ritu and Rajput, S. S. (2017) Modeling of Organic Permeable Base Transistor Based on Inverse of Transistor Efficiency (I-C/g(m)). IEEE Transactions on Electron Devices, 64. pp. 3353-3359. ISSN 0018-9383 |
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| Relation |
http://npl.csircentral.net/2789/
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