WO3-doped LiF as gate dielectric for p-channel vertical organic field effect transistor application
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
WO3-doped LiF as gate dielectric for p-channel vertical organic field effect transistor application
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| Creator |
Verma, Ritu
Suman, C. K. Srivastava, Ritu |
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| Subject |
Materials Science
Applied Physics/Condensed Matter |
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| Description |
We report low voltage operable p-channel vertical organic field effect transistors (VOFETs) using 5,5'""-Dihexyl-2,2':5',2 '':5 '',2'":5'",2"":5'"',2'""-sexithiophene (DH6T) as organic semiconductor and tungsten trioxide (WO3) doped lithium fluoride (LiF) nano-composite of various concentrations as high-k dielectric. Among the various doping concentrations of WO3, the 5 wt% WO3-doped LiF shows the best performance. The gate leakage was effectively reduced from 10(-4) A/cm(2) order to 10(-6) A/cm(2) by the addition of 5 wt% WO3-doped LiF as compare to 0 wt% WO3-doped LiF, resulted in higher drain current for this device. The best values of threshold voltage, mobility, on/off ratio, trans-conductance and sub-threshold slope for the devices made were estimated to be 0.85 V, 0.034 cm(2)/Vs, 10(5), 60 mu S and 0.32 V/decade respectively.
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| Publisher |
Elsevier
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| Date |
2018-11-30
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/4038/1/WO%203%20-doped%20LiF%20as%20gate%20dielectric.pdf
Verma, Ritu and Suman, C. K. and Srivastava, Ritu (2018) WO3-doped LiF as gate dielectric for p-channel vertical organic field effect transistor application. Thin Solid Films, 666. pp. 156-160. ISSN 0040-6090 |
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| Relation |
http://npl.csircentral.net/4038/
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