Study of Phosphorus Doped Micro/Nano Crystalline Silicon Films Deposited by Filtered Cathodic Vacuum Arc Technique
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive InfoField | Value | |
Title |
Study of Phosphorus Doped Micro/Nano Crystalline Silicon Films Deposited by Filtered Cathodic Vacuum Arc Technique
|
|
Creator |
Kesarwani, Ajay Kumar
Panwar, O. S. Tripathi, R. K. Dalai, M. K. Chockalingam, Sreekumar |
|
Subject |
Physical Chemistry
Materials Science |
|
Description |
Phosphorus doped micro/nano crystalline silicon thin films have been deposited by the filtered cathodic vacuum arc technique at different substrate temperatures (T-s) ranging from room temperature (RT) to 350 degrees C. The films have been characterized by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy, secondary ion mass spectroscopy, dark conductivity (sigma(D)), activation energy (Delta E) and optical band gap (E-g). The XRD patterns show that the RT grown film is amorphous in nature but high T-s (225 and 350 degrees C) deposited films have a crystalline structure with (111) and (220) crystal orientation. The crystallite size of the higher T-s grown silicon films evaluated was between 17 to 31 nm. Raman spectra reveal the amorphous nature of the film deposited at RT whereas higher T-s deposited films show a higher crystalline nature. The crystalline volume fraction of the silicon film deposited at higher T-s was estimated as 65.7% and 74.4%. The values of sigma(D), Delta E and E-g of the silicon films deposited at different T-s were found to be in the range of 8.84 x 10(-4) - 0.98 ohm(-1)cm(-1), 0.06 - 0.31 eV and 1.31-1.93 eV, respectively. A n-type nc-Si/p-type c-Si heterojunction diode was fabricated which showed the diode ideality factor between 1.1 to 1.5.
|
|
Publisher |
Elsevier
|
|
Date |
2017-07
|
|
Type |
Article
PeerReviewed |
|
Format |
application/pdf
|
|
Identifier |
http://npl.csircentral.net/2891/1/Study%20of%20Phosphorus%20Doped%20Micro%20Nano%20Crystalline%20Silicon%20Films%20Deposited%20by%20Filtered%20Cathodic%20Vacuum%20Arc%20Technique.pdf
Kesarwani, Ajay Kumar and Panwar, O. S. and Tripathi, R. K. and Dalai, M. K. and Chockalingam, Sreekumar (2017) Study of Phosphorus Doped Micro/Nano Crystalline Silicon Films Deposited by Filtered Cathodic Vacuum Arc Technique. Sustainable Cities and Society, 9 (4). pp. 473-481. ISSN 1876-990X |
|
Relation |
http://npl.csircentral.net/2891/
|
|