Temperature dependent electronic conduction through graphene oxide thin film based two terminal devices
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Temperature dependent electronic conduction through graphene oxide thin film based two terminal devices
|
|
| Creator |
Saini, Pooja
Jain, Harsh Tandon, Ram P. Singh, Surinder P. Mahapatro, Ajit K. |
|
| Subject |
Engineering
Applied Physics/Condensed Matter |
|
| Description |
The temperature dependent electronic conduction through GO thin films sandwitched between indium tin oxide (ITO) substrates and top thermally deposited Al electrode (Al/GO/ITO) is explained. The curent-voltage (I-V) characteristic are measured at various temperatures range of 10-100 degrees C. The temperature dependent I-V through Al/GO/ITO structures in both the forward (ITO as anode) and reverse (ITO as cathode) directions, demonstrate Ohmic behavior with an estimated value of temperature coefficient of resistance 4.2 x 10(-3) identical to the value for Al. The electrical current decreases with increasing temperature at an applied voltage, suggesting the metallic behaviour arising from the formation of Al filament through the GO films.
|
|
| Publisher |
Taylor & Francis
|
|
| Date |
2017
|
|
| Type |
Article
PeerReviewed |
|
| Format |
application/pdf
|
|
| Identifier |
http://npl.csircentral.net/2909/1/Temperature%20dependent%20electronic%20.pdf
Saini, Pooja and Jain, Harsh and Tandon, Ram P. and Singh, Surinder P. and Mahapatro, Ajit K. (2017) Temperature dependent electronic conduction through graphene oxide thin film based two terminal devices. Integrated Ferroelectrics, 184. pp. 210-216. ISSN 1058-4587 |
|
| Relation |
http://npl.csircentral.net/2909/
|
|