Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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Title |
Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films
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Creator |
Mishra, Monu
Gundimeda, Abhiram Krishna, Shibin Aggarwal, Neha Gahtori, Bhasker Dilawar, Nita Aggarwal, Ved Varun Singh, Manju Rakshit, Rajib Gupta, Govind |
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Subject |
Physical Chemistry
Atomic and Molecular Physics |
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Description |
We report formation of aligned nanostructures on epitaxially grown polar and nonpolar GaN films via wet chemical (hot H3PO4 and KOH) etching. The morphological evolution exhibited stress relaxed faceted nanopyramids, flat/trigonal nanorods and porous structures with high hydrophilicity and reduced wettability. The nanostructured films divulged significant suppression of defects and displayed an enhanced intensity ratio of the near band edge emission to the defect band. Extensive photoemission analysis revealed variation in oxidation state along with elimination of OH- and adsorbed H2O molecules from the chemically modified surfaces. Fermi level pinning, and alteration in the surface polarity with substantial changes in the electron affinities were also perceived. The temperature dependent currentvoltage analysis of the nanostructured surfaces displayed enhancement in current conduction. The in-depth analysis demonstrates that the chemically etched samples could potentially be utilized as templates in the design/growth of III-nitride based high performance devices.
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Publisher |
Royal Society of Chemistry
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Date |
2017-04-07
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Type |
Article
PeerReviewed |
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Format |
application/pdf
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Identifier |
http://npl.csircentral.net/2934/1/Wet%20chemical%20etching%20induced%20stress%20relaxed%20nanostructures%20on%20polar%20%26%20non-polar%20epitaxial%20GaN%20films.pdf
Mishra, Monu and Gundimeda, Abhiram and Krishna, Shibin and Aggarwal, Neha and Gahtori, Bhasker and Dilawar, Nita and Aggarwal, Ved Varun and Singh, Manju and Rakshit, Rajib and Gupta, Govind (2017) Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films. Physical Chemistry Chemical Physics, 9 (13). pp. 8787-8801. ISSN 1463-9076 |
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Relation |
http://npl.csircentral.net/2934/
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