Enhanced field effect passivation of c-Si surface via introduction of trap centers: Case of hafnium and aluminium oxide bilayer films deposited by thermal ALD
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Enhanced field effect passivation of c-Si surface via introduction of trap centers: Case of hafnium and aluminium oxide bilayer films deposited by thermal ALD
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| Creator |
Panigrahi, Jagannath
-, Vandana Singh, Rajbir Singh, P. K. |
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| Subject |
Energy Fuels
Materials Science Applied Physics/Condensed Matter |
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| Description |
Field effect passivation of crystalline silicon surface is controlled by tailoring the built-in charge in a bilayer dielectric system consisting of hafnium oxide (HfO2) and aluminium oxide (Al2O3). The effective surface recombination velocity (S-eff, (max)) similar to 10 cm/s is achieved at intermediate bulk injection levels with thermal ALD deposited HfO2 (top)/Al2O3 (bottom) bilayer system on n-type silicon with individual layer thickness between 3 and 7 nm. The best realized Seffme, value is lower by a factor of similar to 2.5 with respect to the single Al2O3 layer of similar thickness deposited under the same experimental conditions. The improved field effect passivation is quantified by enhanced effective charge density for the bilayer system in comparison with the corresponding value for single Al2O3 layer. The introduction of extra trap centers at the interface of the bilayer system is primarily responsible for the enriched field effect passivation, however, the sequence of the dielectric layers is important.
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| Publisher |
Elsevier
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| Date |
2018-12-15
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/3980/1/Enhancedfield%20effect%20passivation.pdf
Panigrahi, Jagannath and -, Vandana and Singh, Rajbir and Singh, P. K. (2018) Enhanced field effect passivation of c-Si surface via introduction of trap centers: Case of hafnium and aluminium oxide bilayer films deposited by thermal ALD. Solar Energy Materials and Solar Cells , 188. pp. 219-227. ISSN 0927-0248 |
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| Relation |
http://npl.csircentral.net/3980/
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