Silicon Wafer Surface Reflectance Investigations by Using Different Surface Texturing Parameters
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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| Title |
Silicon Wafer Surface Reflectance Investigations by Using Different Surface Texturing Parameters
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| Creator |
Moona, Girija
Kapruwan, Pankaj Sharma, Rina Ojha, V. N. |
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| Subject |
Applied Physics/Condensed Matter
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| Description |
This paper discusses surface texturization of monocrystalline silicon wafer < 100 > by using a very simple and cost effective technique consisting of a combination of mechanical grinding and chemical etching, to achieve desired surface reflectance for solar cell applications. The abrasive used for mechanical grinding is aluminum oxide powder with different grain sizes. Potassium hydroxide-isopropyl alcohol solution (with different molar concentrations) is used as alkaline etchant. The change in surface reflectance may be correlated with the change in surface roughness parameters of silicon wafer after texturing. The roughness measurements are performed by using white light interferometry based three dimensional optical profiler. Reflectance measurements of texturized silicon wafer samples are carried out by ultra violet visible spectrophotometer. A comparative reflectance study of silicon wafer samples after using these methods reveals that the combination of mechanical grinding and alkaline etching is more effective for surface texture modification in terms of significantly reduced surface reflectance as compared to a single texturization technique. After reflectance data analysis of texturized samples, correlations have been established for percentage reflectance versus abrasive grain size and percentage reflectance versus molar concentration of etchant. These correlations provide a combination of abrasive grain size and etchant molar concentration to achieve desired value of percentage surface reflectance of silicon wafer from 23.97 to 11.85% at 800nm wavelength, which is significant for solar cell applications.
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| Publisher |
National Academy of Sciences, India
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| Date |
2018-12
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/3998/1/Silicon%20Wafer%20Surface%20Reflectance.pdf
Moona, Girija and Kapruwan, Pankaj and Sharma, Rina and Ojha, V. N. (2018) Silicon Wafer Surface Reflectance Investigations by Using Different Surface Texturing Parameters. Proceedings- National Academy of Siences India Section a, 88 (4). pp. 617-623. ISSN 0369-8203 |
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| Relation |
http://npl.csircentral.net/3998/
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