Growth and Characterization of Highly Conducting Al-Doped ZnO (AZO) Thin Films for Optoelectronic Applications
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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| Title |
Growth and Characterization of Highly Conducting Al-Doped ZnO (AZO) Thin Films for Optoelectronic Applications
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| Creator |
Sardana, Sanjay K.
Singh, Anil Srivastava, Sanjay K. Pandya, Dinesh K. |
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| Subject |
Energy Fuels
Applied Physics/Condensed Matter |
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| Description |
A comparative study of undoped ZnO and Al-doped ZnO (AZO) thin films deposited on glass substrate by spray pyrolysis has been carried out at various aqueous molar concentration of zinc acetate. The thin films deposited on glass shows the wurtzite phase of ZnO, confirmed by X-ray diffraction. The optical study shows the high transmittance over 80% in the visible regime. The band gap of AZO thin films shows a blue shift as compared to undoped ZnO, which has been attributed to Burstein-Moss shift. Heat treatment of these samples in vacuum showed the improved conductivity in compared to as-deposited thin films. The electric study shows the minimum resistivity of 8 x 10(-3) Omega-cm and carrier concentration of 6.5 x 10(19) /cm(3) correspond to AZO thin films.
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| Publisher |
American Institute of Physic
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| Date |
2018
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/3907/1/Growth%20and%20Characterization.pdf
Sardana, Sanjay K. and Singh, Anil and Srivastava, Sanjay K. and Pandya, Dinesh K. (2018) Growth and Characterization of Highly Conducting Al-Doped ZnO (AZO) Thin Films for Optoelectronic Applications. In: INTERNATIONAL CONFERENCE ON NANOMATERIALS FOR ENERGY CONVERSION AND STORAGE APPLICATIONS (NECSA 2018), JAN 29-31, 2018, Deendayal Petr Univ, Gandhinagar, INDIA. |
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| Relation |
http://npl.csircentral.net/3907/
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