Curling Controlled Bilayer Structure for Low Actuation Voltage RF MEMS Switch
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
View Archive Info| Field | Value | |
| Title |
Curling Controlled Bilayer Structure for Low Actuation Voltage RF MEMS Switch
|
|
| Creator |
Mehta, Khushbu
Kaur, M Bansal, D Kumar, A Rangra, K |
|
| Subject |
Sensors and Nanotechnology
|
|
| Description |
AbStLOCt— ln general, RF MEMS devices are made up of gold which get curled up during fabrication. Operating voltage of RF MEMS switches is a function of buckling of structure. These curled up MEMS structures show increased pull-in voltage. Gold shows inbuilt tensile stress. A compressive Polysilicon of poly silicon is deposited over gold layer to overcome buckling in
MEMS structures. Single-layer of gold shows deflection of 18.9 pm and bilayer of polysilicon
over gold reduced to deflection of 9.35 pm with overall reduction of 50.5%.
|
|
| Date |
2019-12-02
|
|
| Type |
Conference or Workshop Item
PeerReviewed |
|
| Format |
application/pdf
|
|
| Identifier |
http://ceeri.csircentral.net/344/1/34-2017.pdf
Mehta, Khushbu and Kaur, M and Bansal, D and Kumar, A and Rangra, K (2019) Curling Controlled Bilayer Structure for Low Actuation Voltage RF MEMS Switch. In: I W P S D 2017, December 11-15, 2017, IIT Delhi. (Submitted) |
|
| Relation |
http://ceeri.csircentral.net/344/
|
|