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Development of GaN HEMTs based Biosensor

IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani

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Field Value
 
Title Development of GaN HEMTs based Biosensor
 
Creator Chaturvedi, N
Mishra, S
Dhakad, S
Singh, K
Chaurvedi, N
Chauhan, A
Kharbanda, D.K
Khanna, P.K
Sharma, N
 
Subject Sensors and Nanotechnology
 
Description In recent years, AlGaN/GaN HEMTs structure has drawn the substantial attention of researchers for biosensing applications. This is primarily due to its outstanding properties such as high n„ high p, higher chemical and thermal stability, higher sensitivity, and non-toxicity to the living cells. In this paper, we are reporting on the development of GaN HEMTs based biosensor for sensing/bio sensing applications.
 
Date 2019-12-02
 
Type Conference or Workshop Item
PeerReviewed
 
Format application/pdf
 
Identifier http://ceeri.csircentral.net/345/1/352017.pdf
Chaturvedi, N and Mishra, S and Dhakad, S and Singh, K and Chaurvedi, N and Chauhan, A and Kharbanda, D.K and Khanna, P.K and Sharma, N (2019) Development of GaN HEMTs based Biosensor. In: XIX International Workshop on The Physics of Semiconductor Devices , 2017, December 11-15, 2017, Delhi. (Submitted)
 
Relation http://ceeri.csircentral.net/345/