GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity
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| Creator |
Jain, Shubhendra Kumar
Aggarwal, Neha Krishna, Shibin Kumar, Rahul Husale, Sudhir Gupta, Vinay Gupta, Govind |
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| Subject |
Electronics and Electrical Engineering
Materials Science Applied Physics/Condensed Matter |
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| Description |
Fabrication of very thin GaN ultraviolet photodetectors on Si (111) substrate integrated with asymmetric (Pt-Ag, Pt-Cr) metal-semiconductor-metal (MSM) structure have been illustrated. Designed GaN photodetection device displays significant enhancement in responsivity for asymmetric (Pt-Ag) MSM structure (280 mA/W) in comparison to symmetric (Pt-Pt) MSM structure (126 mA/W) at 10 V bias. The fabricated asymmetric and symmetric devices also exhibit fast response time in the range of 30-59 ms. The enhancement in responsivity using asymmetric MSM structure ascribed to large difference in work function which lead to change in Schottky barrier height of the metal semiconductor junction. Additionally, power dependent photoresponse analysis of GaN asymmetric (Pt-Ag) ultraviolet photodetector was showing a responsivity of 116 mA/W at low optical power of 1 mW. Such GaN asymmetric MSM ultraviolet photodetectors having high responsivity can extensively be used for low power, high speed ultraviolet photo detection applications
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| Publisher |
Springer Verlag
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| Date |
2018-06
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/3823/1/GaN-UV%20photodetector%20integrated.pdf
Jain, Shubhendra Kumar and Aggarwal, Neha and Krishna, Shibin and Kumar, Rahul and Husale, Sudhir and Gupta, Vinay and Gupta, Govind (2018) GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity. Journal of Materials Science: Materials in Electronics, 29 (11). pp. 8958-8963. ISSN 0957-4522 |
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| Relation |
http://npl.csircentral.net/3823/
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