Effect of Oxygen Admittance Temperature on the Growth of ZnO Microcrystals by Thermal Evaporation Technique
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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| Title |
Effect of Oxygen Admittance Temperature on the Growth of ZnO Microcrystals by Thermal Evaporation Technique
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| Creator |
Srivatsa, K. M. K.
Chhikara, Deepak Kumar, M. Senthil |
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| Subject |
Materials Science
Metallurgy & Metallurgical Engineering |
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| Description |
Hexagonally well-faceted microcrystals of ZnO have been grown by thermal evaporation of Zn powder in oxygen ambient at 700 degrees C under atmospheric pressure. It has been observed that the properties (size and quality) of ZnO microcrystals have a strong dependence on the reactor temperature at which the oxygen gas is admitted into the growth zone. The microcrystals grown with oxygen admittance at 450 degrees C have a length of 1 mu m and a diameter of 0.75 mu m while that grown with oxygen admittance at 600 degrees C have a length of 1.5-2 mu m and a diameter of 1 mu m. Room temperature photoluminescence spectra show a ultraviolet (UV) emission peak at 385 nm with a green band emission at around 500 nm. The UV-to-green band emission ratio for the microcrystals grown with oxygen admittance at 450 degrees C is observed to be 1.25 and the ratio decreases to 0.45 for the sample grown with oxygen admittance at 600 degrees C.
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| Publisher |
Elsevier
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| Date |
2012-04
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/3621/1/Effect%20of%20Oxygen%20Admittance%20Temperature.pdf
Srivatsa, K. M. K. and Chhikara, Deepak and Kumar, M. Senthil (2012) Effect of Oxygen Admittance Temperature on the Growth of ZnO Microcrystals by Thermal Evaporation Technique. Journal of Materials Science and Technology , 28 (4). pp. 317-320. ISSN 1005-0302 |
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| Relation |
http://npl.csircentral.net/3621/
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