Growth of cerium(III)-doped ADP crystals and characterization studies
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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| Title |
Growth of cerium(III)-doped ADP crystals and characterization studies
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| Creator |
Vanchinathan, K.
Muthu, K. Bhagavannarayana, G. Meenakshisundaram, S. P. |
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| Subject |
Crystallography
Materials Science Applied Physics/Condensed Matter |
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| Description |
Single crystals of Ce(III)-doped ammonium dihydrogen phosphate (ADP) are grown by conventional slow evaporation of aqueous solution and Sankaranarayanan-Ramasamy (SR) technique. High-resolution X-ray diffraction (HRXRD) studies reveal that the crystalline perfection is substantially better in the case of SR-grown crystal. Morphological changes are observed in the doped specimen. Doping has some influence on the DRS spectra and the band gap energy is estimated by Kubelka-Munk algorithm. Lattice parameters are determined by single crystal XRD analysis. The powder X-ray diffraction and FT-IR analyses indicate that the crystal undergoes considerable stress as a result of doping. The incorporation of Ce(III) into the crystalline matrix of ADP is confirmed by energy dispersive X-ray spectroscopy (EDS). Thermal studies reveal no decomposition up to the melting point and no significant changes are observed as a result of foreign ion incorporation in ADP crystalline matrix.
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| Publisher |
Elsevier
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| Date |
2012-09-01
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/3556/1/Growth%20of%20cerium%28III%29-doped%20ADP%20crystals.pdf
Vanchinathan, K. and Muthu, K. and Bhagavannarayana, G. and Meenakshisundaram, S. P. (2012) Growth of cerium(III)-doped ADP crystals and characterization studies. Journal of Crystal Growth, 354 (1). pp. 57-61. ISSN 0022-0248 |
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| Relation |
http://npl.csircentral.net/3556/
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