Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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| Title |
Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness
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| Creator |
Pavunny, S. P.
Misra, P. Thomas, R. Kumar, A. Schubert, J. Scott, J. F. Katiyar, R. S. |
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| Subject |
Applied Physics/Condensed Matter
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| Description |
Careful selection of pulsed laser deposition conditions was executed to achieve sub-nanometer EOT (equivalent oxide thickness) in amorphous LaGdO3 based high-k/metal gate stacks. The lowest EOTs attained were similar to 5.4 angstrom and 8.4 angstrom with and without quantum mechanical correction, respectively. The electrical measurements yielded a high permittivity of 20.5 +/- 2.4, a thin bottom interfacial layer of thickness 4.5 +/- 1 angstrom, and interface (cm(-2) eV(-1)) and fixed (cm(-2)) charge densities of similar to 10(12). Analysis of temperature dependent leakage currents revealed that gate injection current was dominated by Schottky emission below 1.2 MV/cm and quantum mechanical tunneling above this field. The physical origin of substrate injection was found to be a combination of Schottky emission and trap assisted tunneling
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| Publisher |
AIP Publishing
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| Date |
2013-05-13
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/2978/1/Advanced%20high-k%20gate%20dielectric%20amorphous.pdf
Pavunny, S. P. and Misra, P. and Thomas, R. and Kumar, A. and Schubert, J. and Scott, J. F. and Katiyar, R. S. (2013) Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness. Applied Physics Letters, 102 (192904). ISSN 0003-6951 |
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| Relation |
http://npl.csircentral.net/2978/
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