Room Temperature Nanoscale Ferroelectricity in Magnetoelectric GaFeO3 Epitaxial Thin Films
IR@NPL: CSIR-National Physical Laboratory, New Delhi
View Archive Info| Field | Value | |
| Title |
Room Temperature Nanoscale Ferroelectricity in Magnetoelectric GaFeO3 Epitaxial Thin Films
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| Creator |
Mukherjee, Somdutta
Roy, Amritendu Auluck, Sushil Prasad, Rajendra Gupta, Rajeev Garg, Ashish |
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| Subject |
Physics
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| Description |
We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric gallium ferrite. Piezoforce measurements show a 180 degrees phase shift of piezoresponse upon switching the electric field indicating nanoscale ferroelectricity in the thin films. Further, temperature-dependent impedance analysis with and without the presence of an external magnetic field clearly reveals a pronounced magnetodielectric effect across the magnetic transition temperature. In addition, our first principles calculations show that Fe ions are not only responsible for ferrimagnetism as observed earlier but also give rise to the observed ferroelectricity, making gallium ferrite a unique single phase multiferroic.
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| Publisher |
American Physical Society
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| Date |
2013-08-21
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/3067/1/Room%20Temperature%20Nanoscale.pdf
Mukherjee, Somdutta and Roy, Amritendu and Auluck, Sushil and Prasad, Rajendra and Gupta, Rajeev and Garg, Ashish (2013) Room Temperature Nanoscale Ferroelectricity in Magnetoelectric GaFeO3 Epitaxial Thin Films. Physical Review Letters, 111 (8). 087601-1-087601-5. ISSN 0031-9007 |
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| Relation |
http://npl.csircentral.net/3067/
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