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Residual thermal desorption studies of Ga adatoms on trenched Si(5512) surface

IR@NPL: CSIR-National Physical Laboratory, New Delhi


Field	Value

Title	Residual thermal desorption studies of Ga adatoms on trenched Si(5512) surface

Creator	Kumar, Praveen Kumar, Mahesh Shivaprasad, S. M.

Subject	Physical Chemistry Materials Science Applied Physics/Condensed Matter

Description	We present here the thermal stability studies of the room temperature adsorbed Ga/Si(5 5 12) interfaces in the monolayer coverage regime, using AES and LEED as in-situ UHV characterization probes. Ga grows in Stranski-Krastanov growth mode at RT on the 2 x 1 reconstructed Si(5 5 12) surface where islands form on top of 2 ML of flat pseudomorphic Ga, yielding a (1 x 1) LEED pattern for coverages of 1.2 ML and above. When this RT adsorbed Ga/Si(5 5 12) interface is annealed at different temperatures, initially the strained Ga adlayers relax by agglomerating into 3D islands on top of a single Ga monolayer with an activation energy of 0.19 eV in the temperature range of 200-300 degrees C. The remnant Ga monolayer with a sharp (1 x 1) LEED pattern desorbs at temperature >400 degrees C, yielding the (1 1 2)-6 x 1 and 2 x (3 3 7) sub-monolayer superstructural. Finally at 720 degrees C Ga completely desorbs from the surface and leaves the clean 2 x 1 reconstructed Si(5 5 12) surface. The studies demonstrate the richness of the atomically trenched high index Si(5 5 12) surface, in obtaining several anisotropic features that can be used as templates to grow self-assembled nanostructures.

Publisher	Elsevier

Date	2013-10-01

Type	Article PeerReviewed

Format	application/pdf

Identifier	http://npl.csircentral.net/3079/1/Residual%20thermal%20desorption%20studies.pdf Kumar, Praveen and Kumar, Mahesh and Shivaprasad, S. M. (2013) Residual thermal desorption studies of Ga adatoms on trenched Si(5512) surface. Applied Surface Science, 282. 348-350. ISSN 0169-4332

Relation	http://npl.csircentral.net/3079/