Low Stress ZnO Thin Film for MEMS/NEMS Devices
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
View Archive Info| Field | Value | |
| Title |
Low Stress ZnO Thin Film for MEMS/NEMS Devices
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| Creator |
Singh, J
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| Subject |
MEMS and Microsensors
Sensors and Nanotechnology |
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| Description |
Role of oxygen partial pressure (R02) have been investigated on structural, optical and mechanical properties of ZnO films. Oxygen partial pressure was varied 30%-60% and c-axis oriented ZnO (002) thin films were prepared at room temperature. The stress varies in -0.06x109 dyne/cm2 to -2.27x 109 dyne/cm2 range, and compressive in nature. Grain size and surface roughness improved with oxygen content due to reduced oxygen vacancies. ZnO infrared vibration bands (413 cm-1), shows decrease in FWHM due to improved crystallinity. Theoretical model has been proposed to understand consequences of oxygen induced stress in ZnO thin films. It is established that in-plane residual stress strongly depends on R02 and minimal stress films can be obtained for 40% oxygen partial pressure.
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| Date |
2019
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://ceeri.csircentral.net/460/1/012019.pdf
Singh, J (2019) Low Stress ZnO Thin Film for MEMS/NEMS Devices. In: 10th International Conference on Materials for Advanced Technologies, 23-28 June 2019, Singapore. |
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| Relation |
http://ceeri.csircentral.net/460/
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