Reduced Thickness Strain-Free GaN/InAIN Short Period Superlattice Bottom Cladding for 450 nm Laser Diodes
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
View Archive Info| Field | Value | |
| Title |
Reduced Thickness Strain-Free GaN/InAIN Short Period Superlattice Bottom Cladding for 450 nm Laser Diodes
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| Creator |
Paliwal, A
Singh, K Mathew, M |
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| Subject |
Optoelectronic Devices
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| Description |
This work presents the theoretical idea of utilizing strain-free GaN/InAIN short period superlattices (SPSL) as the reduced thickness bottom cladding for the InGaN laser diode (LD) emitting at 450 nm. We have replaced 700 nm n-A10 065Gao 935N bottom cladding with 100 stacks of n-GaN/ n-In018A10.82N SPSL having thickness of 1 nm each, as shown in Fig 1. The refractive index of Ino 18A10.82N is 2.3603 which is far lower than the conventional Alo 06sGao 935N cladding ~ 2.477. Thus, 200 nm SPSL layers are sufficient to achieve the optical field confinement equivalent to the conventional structure. As shown in Fig 2 and 3, the optical field confinement factor in the waveguide of reference LD is 3.28%, with 200 nm SPSL it is 3.43%. However, the strain due to Alo 065Gao 935N cladding is -0.9321 x 10-3 which has been eliminated due to the lattice matched GaN/InAIN SPSL. The L-I characteristic of both the laser diodes remains unchanged, however, the slight increase in resistance at higher applied bias has been observed. The computations are carried out in SiLENSe 5.12 tool.
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| Date |
2019
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://ceeri.csircentral.net/494/1/232019.pdf
Paliwal, A and Singh, K and Mathew, M (2019) Reduced Thickness Strain-Free GaN/InAIN Short Period Superlattice Bottom Cladding for 450 nm Laser Diodes. In: XXth International Workshop on Physics of Semiconductor Devices(IWPSD-2019), December, 17-20, 2019, Novotel Hotel And Residences, Kolkata, India. |
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| Relation |
http://ceeri.csircentral.net/494/
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