Contact Area Design of Ohmic RF MEMS Switch for Enhanced Power Handling
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
View Archive Info| Field | Value | |
| Title |
Contact Area Design of Ohmic RF MEMS Switch for Enhanced Power Handling
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| Creator |
Anuroop, Mr
Bansal, D Khushbu, Ms Kumar, P Kumar, A Rangra, K |
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| Subject |
MEMS and Microsensors
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| Description |
RF MEMS switches are small in size, consume low power and have good RF response. However, the field deployment of RF MEMS switches is restricted due to limited power handling capability and reliability issues. In literature, power handling is improved through contact area either by adding hard materials or increasing the thickness. In the present paper, calculations for contact area versus stiction forces are performed and RF MEMS ohmic switch with optimal contact area is proposed and fabricated. The power handling of RF MEMS switch is increased by 55.86% without the addition of new material or processing steps. Insertion loss and return loss of the switch are also improved using corner compensation.
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| Date |
2018
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://ceeri.csircentral.net/590/1/24-2018.pdf
Anuroop, Mr and Bansal, D and Khushbu, Ms and Kumar, P and Kumar, A and Rangra, K (2018) Contact Area Design of Ohmic RF MEMS Switch for Enhanced Power Handling. In: 12th International Conference on Sensing Technology (ICST-2018), December 4-6, 2018, Limerick, Ireland. |
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| Relation |
http://ceeri.csircentral.net/590/
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