Hole Injection Enhancement in InGaN Laser Diodes
IR@CEERI: CSIR-Central Electronics Engineering Research Institute, Pilani
View Archive Info| Field | Value | |
| Title |
Hole Injection Enhancement in InGaN Laser Diodes
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| Creator |
Paliwal, A
Singh, K Mathew, M |
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| Subject |
Optoelectronic Devices
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| Description |
Performance of blue laser diode improved by adding 5 nm p-GaN layer prior to electron blocking layer. Decreased polarization discontinuity reduces band bending, which enhances hole transport from 7.698 kA-cm-2 to 8.961 kA-cm-2, reduces electron leakage from 2.546 kA-cm-2 to
0.842 kA-cm2 and laser power improves from 146.54 mW to 204.8 mW at 10 kA-cm-2.
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| Date |
2018
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| Type |
Conference or Workshop Item
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://ceeri.csircentral.net/592/1/25-2018%282%29.pdf
Paliwal, A and Singh, K and Mathew, M (2018) Hole Injection Enhancement in InGaN Laser Diodes. In: International Conference on Fiber Optics and Photonics (PHOTONICS-2018), December 12-15, 2018, IIT Delhi, India. |
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| Relation |
http://ceeri.csircentral.net/592/
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