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Impact of Gd Doping on Morphology and Superconductivity of NbN Sputtered Thin Films

IR@NPL: CSIR-National Physical Laboratory, New Delhi

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Title Impact of Gd Doping on Morphology and Superconductivity of NbN Sputtered Thin Films
 
Creator Jha, Rajveer
Jyoti, Jeevan
Awana, V. P. S.
 
Subject Applied Physics/Condensed Matter
 
Description We report the effect of Gd inclusion in the NbN superconductor thin films. The films are deposited on single crystalline Silicon (100) by DC reactive sputtering technique, i.e., deposition of Nb and Gd in presence of reactive N-2 gas. The fabricated relatively thick films (400 nm) are crystallized in cubic structure. These films are characterized for their morphology, elemental analysis, and roughness by Scanning Electron Microscopy (SEM), Energy Dispersive X-ray spectroscopy (EDAX), and Atomic Force Microscopy (AFM) respectively. The optimized film (maximum T (c) ) is achieved with gas ratio of Ar:N-2 (80:20) for both pristine and Gd-doped films. The optimized NbN film possesses T (c) (R=0) in zero and 140 kOe fields are at 14.8 K and 8.8 K, respectively. The Gd-doped NbN film showed T (c) (R=0) in zero and 130 kOe fields at 11.2 K and 6.8 K, respectively. The upper critical field H (c2)(0) of the studied superconducting films is calculated from the magneto-transport [R(T)H] measurements using GL equations. It is found that Gd doping deteriorated the superconducting performance of NbN.
 
Publisher Springer Verlag
 
Date 2013-10
 
Type Article
PeerReviewed
 
Format application/pdf
 
Identifier http://npl.csircentral.net/3183/1/Impact%20of%20Gd%20Doping%20on%20Morphology.pdf
Jha, Rajveer and Jyoti, Jeevan and Awana, V. P. S. (2013) Impact of Gd Doping on Morphology and Superconductivity of NbN Sputtered Thin Films. Journal of Superconductivity and Novel Magnetism, 26 (10). pp. 3069-3074. ISSN 1557-1939
 
Relation http://npl.csircentral.net/3183/