Optimization of electroless plating of gold during MACE for through etching of silicon wafer
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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| Title |
Optimization of electroless plating of gold during MACE for through etching of silicon wafer
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| Creator |
Maurya, Muni Raj
Toutam, Vijaykumar Singh, Preetam Bathula, Sivaiah |
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| Subject |
Electronics and Electrical Engineering
Materials Science Applied Physics/Condensed Matter |
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| Description |
Deep etching of silicon (Si) is very much desirable for wide variety of applications. Under the context, a cost effective and reproducible through etching of similar to 375 mu m thick Si wafer is demonstrated through long hour metal assisted chemical etching (MACE) followed by short duration KOH etching. During MACE, apart from pH and temperature, metal catalyst size and coverage density during electroless plating plays an important role. Optimization of gold deposition in terms of plating solution concentration and deposition time during MACE is studied for effective through etching. HAuCl4 concentration of similar to 5 mM for 30 s is found to be best suited for MACE and produces deep and highly dense pores in Si with threshold pore radius similar to 250 nm and above. Following the MACE, KOH etching effectively scoops out porous Si to realize through etching.
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| Publisher |
Elsevier
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| Date |
2019-09
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/4404/1/Optimization%20of%20electroless%20plating%20of%20gold%20during%20MACE%20for%20through%20etching%20of%20silicon%20wafer.pdf
Maurya, Muni Raj and Toutam, Vijaykumar and Singh, Preetam and Bathula, Sivaiah (2019) Optimization of electroless plating of gold during MACE for through etching of silicon wafer. Materials Science in Semiconductor Processing, 100. pp. 140-144. ISSN 1369-8001 |
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| Relation |
http://npl.csircentral.net/4404/
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