Optimization of oxygen plasma based etching of single layered graphene through Raman and FESEM characterization
IR@CGCRI: CSIR-Central Glass and Ceramic Research Institute, Kolkata
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| Title |
Optimization of oxygen plasma based etching of single layered graphene through Raman and FESEM characterization
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| Creator |
Agarwal, Pankaj B
Paulchowdhury, Prathana Mukherjee, Arnab Lohani, Piyush Thakur, Navneet Kumar |
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| Subject |
Microstructure and Characterization
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| Description |
Graphene field-effect transistors (GFETs) show high electron transfer rates, high charge-carrier mobility, low electrical noise levels and flexibility of surface functionalization, which are useful to realize the sensors for various applications. The key challenge is to develop the processes to fabricate a uniform array of GFETs devices. In this paper, single-layered graphene (SLG) was synthesized on copper (Cu) substrate using chemical vapor deposition (CVD) followed by its successful transfer over silicon (Si) substrate. To realize an array of graphene-based devices/ sensors, the process of oxygen plasma based clean etching of SLG was optimized. The Raman and Field Emission Scanning Electron Microscope (FESEM) characterizations ensure the complete etching of SLG in 240 s using 200 W, RF (13.56 MHz) power. Optimized SLG etching would help to fabricate an array of GFETs as a biochemical sensor platform. (c) 2021 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the International Conference on Advances in Nanomaterials and Devices for Energy and Environment.
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| Publisher |
Elsevier
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| Date |
2022
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cgcri.csircentral.net/5409/1/arnab.pdf
Agarwal, Pankaj B and Paulchowdhury, Prathana and Mukherjee, Arnab and Lohani, Piyush and Thakur, Navneet Kumar (2022) Optimization of oxygen plasma based etching of single layered graphene through Raman and FESEM characterization. Materials Today-Proceedings, 48 (3, SI). pp. 616-618. ISSN 2214-7853 |
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| Relation |
http://cgcri.csircentral.net/5409/
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