Surface/Interface Defect Engineering on Charge Carrier Transport toward Broadband (UV-NIR) Photoresponse in the Heterostructure Array of p-Si NWs/ZnO Photodetector
IR@CGCRI: CSIR-Central Glass and Ceramic Research Institute, Kolkata
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| Title |
Surface/Interface Defect Engineering on Charge Carrier Transport toward Broadband (UV-NIR) Photoresponse in the Heterostructure Array of p-Si NWs/ZnO Photodetector
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| Creator |
Samanta, Chandan
Ghatak, Ankita Raychaudhuri, Arup Kumar Ghosh, Barnali |
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| Subject |
Engineering Materials
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| Description |
The surface/interface properties, especially interfacial states, have a key impact on overall carrier generation, recombination/transport, and/or collection proficiency for heterostructurebased photodetectors. This study demonstrates the significant enhancement of ultraviolet-near infrared (UV-NIR) (300-1100 nm) broadband photodetection in the heterostructure array of p-Si NWs/ZnO photodetectors with engineering of surface/interface charge carrier transportation under different processing conditions. In the case of a pulsed laser deposition (PLD)-grown photodetector, coupling of the subsidiary value of the defect state with the interfacial layer (Si-O-Zn) at the p-n junction reduces the charge carrier recombination, resulting in a large enhancement of transient photocurrent in the visible (Vis)-NIR region. However, in the case of a chemical solution deposition (CSD)-grown photodetector, plenty of oxygen vacancies (Vos) become the trap-assisted recombination centers by capturing of photoinduced carriers. The average value of responsivity (R) at 1 V bias for the PLD-grown detector is -5.5 A/W in the Vis-NIR (500-1100 nm) region, whereas in the UV region (<= 375 nm), the value of R reached -8 A/ W. The value of R in the PLD-grown detector is enhanced -102 folds in the UV region and -20 folds in the Vis-NIR region comparison with the CSD-grown detector. Further, carrier generation, trapping, and transport/recombination processes in the surface/interface are well illustrated to explain the dynamics of the charge carrier contributing to the photoresponse behavior in the UV-NIR broadband region.
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| Publisher |
ACS Publication
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| Date |
2023-02
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cgcri.csircentral.net/5550/1/acsaelm.2c01431.pdf
Samanta, Chandan and Ghatak, Ankita and Raychaudhuri, Arup Kumar and Ghosh, Barnali (2023) Surface/Interface Defect Engineering on Charge Carrier Transport toward Broadband (UV-NIR) Photoresponse in the Heterostructure Array of p-Si NWs/ZnO Photodetector. ACS Applied Electronic Materials, 5 (2). pp. 865-876. ISSN 2637-6113 |
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| Relation |
http://cgcri.csircentral.net/5550/
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