Unpinning of surface state at 0.92 eV by nanocrystalline ZnSe on GaAs
Metadata of CSIR Papers
View Archive Info| Field | Value | |
| Title |
Unpinning of surface state at 0.92 eV by nanocrystalline ZnSe on GaAs
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| Creator |
Hullavarad, SS
Nikesh, VV Sainkar, SR Ganesan, V Mahamuni, S Bhoraskar, SV |
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| Subject |
Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
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| Description |
A thin film of nanocrystalline ZnSe was deposited on GaAs by a chemical method and the resulting heterostructure was characterized for its passivating behavior. A remarkable enhancement in the intensity of photoluminescence of GaAs at 875 nm was achieved as a consequence of the deposition. The passivating effects of nanocrystalline ZnSe was confirmed by thermally stimulated exoelectron emission spectroscopy, a surface technique for gap state analysis. The disappearance of the peak related to the pinned Fermi level position at 0.92 eV below the conduction band edge was the resulting feature. A nanocrystalline growth of ZnSe was observed an GaAs by scanning electron microscopy. (C) 2001 Elsevier Science B.V. All rights reserved.
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| Publisher |
ELSEVIER SCIENCE SALAUSANNEPO BOX 564, 1001 LAUSANNE, SWITZERLAND
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| Date |
2011-09-24T09:27:43Z
2011-09-24T09:27:43Z 2001 |
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| Type |
Article
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| Identifier |
THIN SOLID FILMS
0040-6090 http://hdl.handle.net/123456789/24159 |
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| Language |
English
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