Study of Au, Ni-(n)ZnSe thin film Schottky barrier junctions
IR@NEIST: CSIR-North East Institute of Science and Technology, Jorhat
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| Title |
Study of Au, Ni-(n)ZnSe thin film Schottky barrier junctions
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| Creator |
CHALIHA, S
Borah, M N Sarmah, P C Rahman, A |
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| Subject |
Electronics
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| Description |
Schottky barrier junctions of Al-doped n-type Zinc selenide (ZnSe) thin
films of doping concentrations up to 9.7×1014cm−3 have been fabricated with Au and
Ni electrodes on glass substrates by sequential thermal evaporation. All of the junctions
of different doping concentrations exhibited rectifying current-voltage characteristics
with a non-saturating reverse current. From the current-voltage characteristics, the
different junction parameters such as ideality factor, saturation current density, series
resistance, etc., were measured. Both types of junctions were found to possess a high
ideality factor and a high series resistance. The barrier heights of the junctions were
measured from Richardson plots and found to be around 0.8 eV. The structures were
found to exhibit a poor photovoltaic effect with a fill factor not greater than 0.4. The
diode quality as well as the photovoltaic performance of the diodes were improved
following a short heat treatment in vacuum.
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| Date |
2010
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://neist.csircentral.net/75/1/2676_Int_J_Thermophysics2009.pdf
CHALIHA, S and Borah, M N and Sarmah, P C and Rahman, A (2010) Study of Au, Ni-(n)ZnSe thin film Schottky barrier junctions. International J Thermophysics, 31. pp. 2030-2039. |
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| Relation |
http://neist.csircentral.net/75/
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