Electrical properties of thermally evaporated doped and undoped films of CdSe
IR@NEIST: CSIR-North East Institute of Science and Technology, Jorhat
View Archive Info| Field | Value | |
| Title |
Electrical properties of thermally evaporated doped and undoped films of CdSe
|
|
| Creator |
BORAH , M N
CHALIHA , S SARMAH , P C RAHMAN , A |
|
| Subject |
Electronics
|
|
| Description |
Electrical characteristics of Ag-doped and undoped films
of CdSe have been reported. The activation energies at
lower and elevated temperatures have been found to be
0.22 and 0.6eV, respectively. The Sn/CdSe junction
exhibits Schottky barrier characteristics with diode
ideality factor deviating from unity. Barrier height
obtained from C-V plot and J- V plot are 0.8 and 0.72eV,
respectively. The junction has been endowed with high
series resistance.
|
|
| Date |
2007
|
|
| Type |
Article
PeerReviewed |
|
| Format |
application/pdf
|
|
| Identifier |
http://neist.csircentral.net/264/1/2500_Indian_JPure%26ApplPhys45_8p.687%2D91.pdf
BORAH , M N and CHALIHA , S and SARMAH , P C and RAHMAN , A (2007) Electrical properties of thermally evaporated doped and undoped films of CdSe. Indian Journal of Pure Applied Physics, 45 (8). pp. 687-691. |
|
| Relation |
http://neist.csircentral.net/264/
|
|