Voltage characteristics of Ag,Al, Ni - (N)CTDE junction
IR@NEIST: CSIR-North East Institute of Science and Technology, Jorhat
View Archive Info| Field | Value | |
| Title |
Voltage characteristics of Ag,Al, Ni - (N)CTDE junction
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| Creator |
SARMAH, P C
RAHMAN , A |
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| Subject |
Electronics
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| Description |
Schottky barriers of Ag, Al, Ni–(n)CdTe structures have been prepared and studied. The films were
prepared by rf sputtering and doped with Cd metal. Diode ideality factor of these junctions are greater than
unity and barrier height varies from 0×6–0×7 eV and are affected by room illumination. Photovoltaic effect of
these junctions was very poor and fill factor below 0×4. Low doping concentration, high defect density, presence
of an interfacial layer and presence of high series resistance are perceived to affect the J–V character
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| Date |
2001
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://neist.csircentral.net/359/1/943_Bull_Mat_Sci_2001_24(4)p.411%2D14.pdf
SARMAH, P C and RAHMAN , A (2001) Voltage characteristics of Ag,Al, Ni - (N)CTDE junction. Bulletin of Material Science, 24 (4). pp. 411-414. |
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| Relation |
http://neist.csircentral.net/359/
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