Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti(62.5)Si(37.5) thin films during Xe ion irradiation
IR@CGCRI: CSIR-Central Glass and Ceramic Research Institute, Kolkata
View Archive Info| Field | Value | |
| Title |
Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti(62.5)Si(37.5) thin films during Xe ion irradiation
|
|
| Creator |
Bysakh, Sandip
Mitsuishi, Kazutaka Song, Minghui Furuya, Kazuo Chattopadhyay, Kamanio |
|
| Subject |
Microstructure and Characterization
|
|
| Description |
As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe(+) ion beam to an ion fluence of about 10(16) ions-cm(-2). Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti(5)Si(3) intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.
|
|
| Publisher |
Materials Research Society
|
|
| Date |
2011-01
|
|
| Type |
Article
PeerReviewed |
|
| Format |
application/pdf
|
|
| Identifier |
http://cgcri.csircentral.net/80/1/bysakh2011.pdf
Bysakh, Sandip and Mitsuishi, Kazutaka and Song, Minghui and Furuya, Kazuo and Chattopadhyay, Kamanio (2011) Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti(62.5)Si(37.5) thin films during Xe ion irradiation. Journal of Materials Research, 26 (1). pp. 62-69. ISSN 0884-2914 |
|
| Relation |
http://cgcri.csircentral.net/80/
|
|