Vacuum evaporated CdSe thin films and their characteristics
IR@CECRI: CSIR-Central Electrochemical Research Institute, Karaikudi
View Archive Info| Field | Value | |
| Title |
Vacuum evaporated CdSe thin films and their characteristics
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| Creator |
Murali, K.R.
Srinivasan, K. Trivedi, D.C. |
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| Subject |
Functional Materials
Electrochemical Materials Science |
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| Description |
CdSe films that were vacuum deposited using the laboratory synthesized CdSe powder as source material were studied. The substrate
temperature was varied in the range 30–200 8C. X-ray diffraction (XRD) studies indicated preferential orientation in the (002) direction. SEM
studies indicated increase of grain size from 1.9 to 3.9 Am with increase of substrate temperature. The power conversion efficiency was found
to be 7.0% under an illumination of 60 mW cm�2 after photoetching. A peak quantum efficiency of 0.6 was obtained for an incident
wavelength of 720 nm. Semiconducting parameters were estimated. Preliminary studies on large area films (25 cm2) indicated an efficiency
of 5.9%.
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| Publisher |
Elsevier
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| Date |
2005
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cecri.csircentral.net/135/1/072-2005.pdf
Murali, K.R. and Srinivasan, K. and Trivedi, D.C. (2005) Vacuum evaporated CdSe thin films and their characteristics. Materials Letters, 59 (1). pp. 15-18. |
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| Relation |
http://cecri.csircentral.net/135/
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