Structural, optical and photoconductive properties of electron beam evaporated CdSxSe1-x films
IR@CECRI: CSIR-Central Electrochemical Research Institute, Karaikudi
View Archive Info| Field | Value | |
| Title |
Structural, optical and photoconductive properties of electron
beam evaporated CdSxSe1-x films
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| Creator |
Sivaramamoorthy, K.
Bahadur, S.A. Kottaisamy, M. Murali, K.R. |
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| Subject |
Electrochemical Materials Science
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| Description |
CdSxSe1-x films were deposited by the electron beam evaporation technique on glass substrates at different
temperatures in the range 30 – 300 °C using the laboratory synthesized powders of different composition. The
films exhibited hexagonal structure and the lattice parameters shifted from CdSe to CdS side as the
composition changed from CdSe to CdS side. The bandgap of the films increased from 1.68 to 2.41 eV as the
concentration of CdS increased. The root-mean-roughness (RMS) values are 3.4, 2.6, 1.2 and 0.6 nm as the
composition of the films shifted towards CdS side. The conductivity varies from 30 Ωcm-1 to 480 Ωcm-1 as
the ‘x’ value increases from 0 to 1. The films exhibited photosensitivity. The PL spectrum shifts towards
lower energies with decreasing x, due to the decrease of the fundamental gap with Se composition.
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| Publisher |
WILEY-VCH Verlag GmbH & Co.
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| Date |
2010
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cecri.csircentral.net/206/1/2010-029_%282%29.pdf
Sivaramamoorthy, K. and Bahadur, S.A. and Kottaisamy, M. and Murali, K.R. (2010) Structural, optical and photoconductive properties of electron beam evaporated CdSxSe1-x films. Crystal Research and Technology, 45 (4). 414 -420. ISSN 0232-1300 |
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| Relation |
http://cecri.csircentral.net/206/
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