Structural, optical, and electrical properties of electron beam evaporated CdSe thin films
IR@CECRI: CSIR-Central Electrochemical Research Institute, Karaikudi
View Archive Info| Field | Value | |
| Title |
Structural, optical, and electrical properties of electron beam evaporated CdSe thin films
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| Creator |
Syedbasheerahamed, M.S.
Balu, A.R. Nagarethinam, V.S. Thayumanavan, A. Murali, K.R. Sanjeeviraja, C. Jayachandran, M. |
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| Subject |
Electrochemical Materials Science
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| Description |
CdSe films have been deposited on glass substrates at different substrate temperatures between room
temperature and 300 °C. The films exhibited hexagonal structure with preferential orientation in the (002)
direction. The crystallinity improved and the grain size increased with temperature. Band gap values are
found decreasing from about 1.92 eV to 1.77 eV with increase of the substrate temperature. It is observed that
the resistivity decreases continuously with temperature. Laser Raman studies show the presence of 2 LO and
3 LO peaks at 416 cm-1 and 625 cm-1 respectively.
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| Publisher |
WILEY-VCH Verlag GmbH & Co.
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| Date |
2010
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cecri.csircentral.net/209/1/2010-030.pdf
Syedbasheerahamed, M.S. and Balu, A.R. and Nagarethinam, V.S. and Thayumanavan, A. and Murali, K.R. and Sanjeeviraja, C. and Jayachandran, M. (2010) Structural, optical, and electrical properties of electron beam evaporated CdSe thin films. Crystal Research and Technology, 45 (4). 387 -392. ISSN 0232-1300 |
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| Relation |
http://cecri.csircentral.net/209/
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