Photoelectrochemical properties of CdSxTe1-x films
IR@CECRI: CSIR-Central Electrochemical Research Institute, Karaikudi
View Archive Info| Field | Value | |
| Title |
Photoelectrochemical properties of CdSxTe1-x films
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| Creator |
Murali, K.R.
Thirumoorthy, P. |
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| Subject |
Electrochemical Materials Science
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| Description |
CdSxTe1-x films were deposited on titanium and conducting glass substrates at room temperature using 0.25 M cadmium sulphate, the concentration of sodium thiosulphate and TeO2 dissolved in sodium hydroxide was varied in the range of 0.01–0.05 M. The as deposited films exhibited hexagonal structure irrespective of the composition. The FWHM maximum of the x-ray diffraction peaks were found to decrease with increase of duty cycle. The optical energy gap values are in the range of 1.54–2.32 eV for films of different composition, it is observed that the band gap shifts towards CdS side as the concentration of CdS in the films increase. Photoelectrochemical cell studies indicated higher short circuit current density and efficiency compared to earlier reports.
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| Publisher |
National Institute of Materials Physics
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| Date |
2009
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cecri.csircentral.net/279/1/017-2009.pdf
Murali, K.R. and Thirumoorthy, P. (2009) Photoelectrochemical properties of CdSxTe1-x films. Chalcogenide Letters, 6 (8). pp. 377-384. ISSN 1584-8663 |
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| Relation |
http://cecri.csircentral.net/279/
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