Photoelectrochemical properties of pulse electrodeposited cadmium selenide films
IR@CECRI: CSIR-Central Electrochemical Research Institute, Karaikudi
View Archive Info| Field | Value | |
| Title |
Photoelectrochemical properties of pulse electrodeposited cadmium selenide films
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| Creator |
Murali, K.R.
Manoharan, C. Dhanapandiyan, S. |
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| Subject |
Electrochemical Materials Science
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| Description |
CdSe films were deposited by the pulse plating technique in the presence of silicotungstic
acid.The films deposited in the presence of silicotungstic acid exhibited hexagonal
structure. The films exhibited a direct band gap of 1.67 eV. With addition of
silsicotungstic acid, the average grain size decreased from 17.1 nm to 11.7 nm, and the
grain became more homogeneous.The surface roughness decreased from 2.83 nm to 1.97
ater adding silicotungstic acid.The efficiency of the photoelectrochemical cells increases
with addition of silico-tungstic acid.
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| Publisher |
National Institute of Materials Physics
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| Date |
2009
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cecri.csircentral.net/282/1/019-2009.pdf
Murali, K.R. and Manoharan, C. and Dhanapandiyan, S. (2009) Photoelectrochemical properties of pulse electrodeposited cadmium selenide films. Chalcogenide Letters, 6 (1). pp. 57-61. ISSN 1584-8663 |
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| Relation |
http://cecri.csircentral.net/282/
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