Pulse electrodeposited zinc selenide films and their characteristics
IR@CECRI: CSIR-Central Electrochemical Research Institute, Karaikudi
View Archive Info| Field | Value | |
| Title |
Pulse electrodeposited zinc selenide films and their characteristics
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| Creator |
Murali, K.R.
Dhanapandiyan, S. Manoharan, C. |
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| Subject |
Electrochemical Materials Science
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| Description |
Zinc selenide (ZnSe) thin films were pulse deposited for the first time using polycyclic
acid. The films exhibited hexagonal structure. The band gap of the films varied in the
range of 2.7 – 3.1 eV as the concentration of silico-tungstic acid increased. Atomic force
microscopy indicated grain size decreased from 60 – 15 nm after addition of silicotungstic
acid. Laser Raman spectrum exhibited LO phonons corresponding to ZnSe. The
photoluminescence spectrum peaks at 675 nm. As the concentration of silico-tungstic acid
increases, the PL emission peak shifts to shorter wavelenghths.
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| Publisher |
National Institute of Materials Physics
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| Date |
2009
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cecri.csircentral.net/283/1/020-2009.pdf
Murali, K.R. and Dhanapandiyan, S. and Manoharan, C. (2009) Pulse electrodeposited zinc selenide films and their characteristics. Chalcogenide Letters, 6 (1). pp. 51-56. ISSN 1584-8663 |
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| Relation |
http://cecri.csircentral.net/283/
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