Deposition of Cd-xZn1-xSe films by brush electrodeposition and their characteristics
IR@CECRI: CSIR-Central Electrochemical Research Institute, Karaikudi
View Archive Info| Field | Value | |
| Title |
Deposition of Cd-xZn1-xSe films by brush electrodeposition and their characteristics
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| Creator |
Murali, K.R.
Austine, A. |
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| Subject |
Electrochemical Materials Science
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| Description |
CdxZn1-xSe films(0≤x≤1) were deposited for the first time by the brush plating technique at
room temperature from an aqueous bath containing zinc sulphate, cadmium sulphate and
selenium oxide. The deposition current density was varied in the range of 50 – 250 mA
cm-2. The as deposited films exhibited cubic structure. Composition of the films was
estimated by EDAX studies. Optical band gap of the films varied from 1.72 eV to 2.70 eV
as the composition varied from CdSe to ZnSe side. Electrical properties of the films were
determined at room temperature. The room temperature resistivity, carrier density and
mobility varied in the range of 9.0 ohm cm – 200 ohm cm,10 – 2 cm2V-1s-1 and 6.94 x
1016 – 1.56 x 1016 cm-3 respectively as the composition changed from CdSe to ZnSe side.
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| Publisher |
National Institute of Materials Physics
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| Date |
2009
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cecri.csircentral.net/284/1/021-2009.pdf
Murali, K.R. and Austine, A. (2009) Deposition of Cd-xZn1-xSe films by brush electrodeposition and their characteristics. Chalcogenide Letters, 6 (1). pp. 23-28. ISSN 1584-8663 |
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| Relation |
http://cecri.csircentral.net/284/
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