Effects of annealing temperature on structural, optical, and electrical properties of antimony-doped tin oxide thin films
IR@CECRI: CSIR-Central Electrochemical Research Institute, Karaikudi
View Archive Info| Field | Value | |
| Title |
Effects of annealing temperature on structural,
optical, and electrical properties of antimony-doped
tin oxide thin films
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| Creator |
Senthilkumar, V.
Vickraman, P. Joseph Prince, J. Jayachandran, M. Sanjeeviraja, C. |
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| Subject |
Electrochemical Materials Science
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| Description |
Antimony-doped tin oxide (ATO) films, approximately 320nm in thickness,
have been prepared by electron beam evaporation onto glass
substrates. The films were annealed at temperatures between 400C and 550C in air and their structure and surface morphologies were observed by
X-ray diffraction (XRD) and atomic force microscopy (AFM) after the
different annealing treatments. XRD patterns of the ATO thin films
as-deposited and annealed at 400�C showed that they were amorphous, but
annealing beyond 400�C caused the films to become polycrystalline with
tetragonal structure and orientated in the (1 1 0) direction. The grain size
in the annealed films, obtained from the XRD analysis, was in the range
146–256A ˚ and this increased with the annealing temperature. The
dislocation density, cell volume and strain were found to decrease gradually
with increasing annealing temperature. Photoluminescence spectra revealed
an intensive blue/violet peak at 420 nm, which increased gradually in height
with annealing. It is suggested that an increase in the population of Sbþ5
ions might be the reason for the enhancement of the blue/violet emission.
The optical properties of the films were also investigated in the
UV-visible-NIR region (300–1000 nm). The optical constants, namely
the refractive index n and the extinction coefficient k in the visible region
were calculated. The optical energy band gap, as determined by the
dependence of the absorption coefficient on the photon energy at short
wavelengths, was found to increase from 3.59 to 3.76 eV with annealing
temperature.
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| Publisher |
Taylor & Francis
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| Date |
2010
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cecri.csircentral.net/533/1/2010-120.pdf
Senthilkumar, V. and Vickraman, P. and Joseph Prince, J. and Jayachandran, M. and Sanjeeviraja, C. (2010) Effects of annealing temperature on structural, optical, and electrical properties of antimony-doped tin oxide thin films. Philosophical Magazine Letters, 90 (5). pp. 337-347. ISSN 0950-0839 |
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| Relation |
http://cecri.csircentral.net/533/
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