Ar+H2 plasma etching for improved adhesion of PVD coatings on steel substrates
IR@NAL: CSIR-National Aerospace Laboratories, Bangalore
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| Title |
Ar+H2 plasma etching for improved adhesion of PVD coatings on steel substrates
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| Creator |
Barshilia, Harish C
Ananth, A Jakeer, Khan Srinivas, G |
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| Subject |
Physics(General)
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| Description |
Ar+H2 plasma cleaning has been described for the surface modification of the steel substrates, which removes oxides and other contaminants from substrate surface effectively leading to a better adhesion of the physical vapor deposited (PVD) coatings. Approximately 1.1-1.3 μm thick TiAlN coatings were deposited on plasma treated (Ar and Ar+H2) and untreated mild steel (MS) substrates. A mechanism has been put forward to explain the effect of plasma treatment on the substrate surface based upon the data obtained from X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The XPS measurements on untreated and Ar+H2 plasma etched MS substrates indicated that the untreated substrate surface mainly consisted of Fe3O¬4, whereas, after etching the concentration of oxides decreased considerably. The FESEM and the AFM results showed changes in the surface morphology and an increase in the substrate roughness as a result of Ar+H2 plasma etching. Removal of oxide/contaminants, formation of coarser surface and increased substrate surface roughness as a result of Ar+H2 plasma etching facilitate good mechanical interlocking at the substrate surface, leading to a better adhesion of the deposited PVD coatings. The adhesion of TiAlN coating could be increased further by incorporating a very thin Ti interlayer.
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| Publisher |
Elsevier
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| Date |
2012
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| Type |
Journal Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://nal-ir.nal.res.in/10029/1/vacuum%2D1.pdf
Barshilia, Harish C and Ananth, A and Jakeer, Khan and Srinivas, G (2012) Ar+H2 plasma etching for improved adhesion of PVD coatings on steel substrates. Vacuum, 86 (8). pp. 1165-1173. ISSN 0042-207X |
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| Relation |
http://dx.doi.org/10.1016/j.vacuum.2011.10.028
http://nal-ir.nal.res.in/10029/ |
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