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Improved photoluminescence properties of sol-gel derived Er(3+) doped silica films

IR@CGCRI: CSIR-Central Glass and Ceramic Research Institute, Kolkata

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Title Improved photoluminescence properties of sol-gel derived Er(3+) doped silica films
 
Creator Pal, Sudipto
Mandal, Abhijit
De, Goutam
Trave, Enrico
Bello, Valentina
Mattei, Giovanni
Mazzoldi, Paolo
Sada, Cinzia
 
Subject Engineering Materials
 
Description Silica films (amorphous and crystalline) doped with erbium were fabricated on silica glass substrate and characterized. The inorganic-organic hybrid sol-gel method was used to prepare the films and the Na codoping induced the crystallization of silica film. Photoluminescence (L) measurements revealed that the Er(3+) ions can be excited from the ground state through an energy transfer process mediated by active defective sites in SiO(2) film matrix. The annealing temperature and atmospheres have large effects on the local environment of Er(3+) and the 1.54 mu m PL intensity can be improved significantly by suitable heating treatments. We could correlate Er(3+) sensitization effect due to the presence of carbon related species in the films. The PL intensity at nonresonant (476.5 nm) condition can be made as intense as the resonant (488 nm) one, for particular annealing conditions. Noticeable changes in PL emission intensities have not been observed whether the matrix silica film is amorphous or crystalline in nature; however, the defect-related luminescence is almost vanished in case of crystalline silica films. (C) 2010 American Institute of Physics. [doi:10.1063/1.3518515]
 
Publisher American Institute of Physics
 
Date 2010-12
 
Type Article
PeerReviewed
 
Format application/pdf
 
Identifier http://cgcri.csircentral.net/851/1/sudipto3'10.pdf
Pal, Sudipto and Mandal, Abhijit and De, Goutam and Trave, Enrico and Bello, Valentina and Mattei, Giovanni and Mazzoldi, Paolo and Sada, Cinzia (2010) Improved photoluminescence properties of sol-gel derived Er(3+) doped silica films. Journal of Applied Physics, 108 (11). Article No.-113116. ISSN 0021-8979
 
Relation http://cgcri.csircentral.net/851/