Reverse-loop impedance profile in Bi2S3 quantum dots
IR@CECRI: CSIR-Central Electrochemical Research Institute, Karaikudi
View Archive Info| Field | Value | |
| Title |
Reverse-loop impedance profile in Bi2S3 quantum dots
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| Creator |
Syedabuthahir, K.A.Z.
Jagannathan, R. |
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| Subject |
Electrochemical Materials Science
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| Description |
Bismuth sulfide quantum dots (∼12 nm) with two-dimensional platelet morphology synthesized
using a simple aqueous colloidal method exhibit directional growth along 211 direction. Impedance
characteristics of this two-dimensional quantum structure yields a characteristic semi-circular profile
due to a classical Voigt element in addition to a semi-circle like loop in the negative imaginary
part of the impedance Nyquist plot. The apparent inductive reverse-loop impedance profile
observed, a distinguishing feature of this study can be explained on the basis of an unusual negative
resistor–capacitor combination, realized due to relaxation of surface states in this technologically
important semiconductor–quantum structure.
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| Publisher |
Elsevier B.V.
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| Date |
2010
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cecri.csircentral.net/505/1/2010-112.pdf
Syedabuthahir, K.A.Z. and Jagannathan, R. (2010) Reverse-loop impedance profile in Bi2S3 quantum dots. Materials Chemistry and Physics, 121. pp. 184-192. ISSN 0254-0584 |
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| Relation |
http://cecri.csircentral.net/505/
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