Defect engineering and opto electronic property modifications by 1.5MeV Li+ implantation on nano crystalline MgIn2O4 thin films
IR@CECRI: CSIR-Central Electrochemical Research Institute, Karaikudi
View Archive Info| Field | Value | |
| Title |
Defect engineering and opto electronic property modifications
by 1.5MeV Li+ implantation on nano crystalline MgIn2O4
thin films
|
|
| Creator |
Moses Ezhil Raj, A.
Som, T. Jayachandran, M. Sanjeeviraja, C. |
|
| Subject |
Electrochemical Materials Science
|
|
| Description |
Spinel MgIn2O4 thin films were deposited on quartz substrates by the chemical spray pyrolysis technique
using metal organic precursors at 450âŚC. Energetic 1.5MeV Li+ ions were implanted to various fluences
of 1013, 1014 and 1015 ions/cm2 onto insulating MgIn2O4 films using a 9 SDH-2, NEC, 3MV accelerator
to modify the material properties and surface nature. X-ray diffraction analysis was carried out to identify
the changes in the crystallinity and grain orientations before and after implantations. Before implantation,
the grains of polycrystalline MgIn2O4 were randomly oriented [(222), (311), (442) and (511)], and after
implantation they exhibited a tendency to realign the crystallites along the even (hkl) planes [(222) and
(442)]. On the Li+-implanted sample, one or more grains combine together and form bigger grains along
with shallowpits, as observed through the atomic force micrographs. The as-deposited films have a percentage
transmittance of 70â80% in the wavelength range 400â800 nm and the observed optical transmittance
was less in Li+-implanted MgIn2O4 films. The index of refraction and the extinction co-efficient values
were respectively n = 1.98 and k = 10â2 in the visible region. However, the DC electrical conductivity
of Li+-implanted films to a fluence of 1015 ions/cm2 was nearly 0.7 S/cm at room temperature. The efficiency
of the carrier generation was increased from 13.41% to 26.81% on annealing the implanted sample
to lower fluence (1013 ions/cm2).
|
|
| Publisher |
Taylor & Francis
|
|
| Date |
2010
|
|
| Type |
Article
PeerReviewed |
|
| Format |
application/pdf
|
|
| Identifier |
http://cecri.csircentral.net/541/1/2010-129.pdf
Moses Ezhil Raj, A. and Som, T. and Jayachandran, M. and Sanjeeviraja, C. (2010) Defect engineering and opto electronic property modifications by 1.5MeV Li+ implantation on nano crystalline MgIn2O4 thin films. Radiation Effects & Defects in Solids: Incorporating Plasma Science & Plasma Technology, 165 (4). pp. 265-276. |
|
| Relation |
http://cecri.csircentral.net/541/
|
|